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TD Memory Quality and Reliability Engineer
Intel
Hillsboro, OR (+ Folsom, Santa Clara) · RemoteFull-time$155,520 – $219,550 / yearly
Job details
Pay
$155,520 – $219,550 / yearly
Job type
Full-time
Work setting
Remote / Hybrid
Location
Hillsboro, OR (+ Folsom, Santa Clara)
Posted
Posted 7 days ago
Full job description
The Memory Quality and Reliability Engineer role focuses on post-silicon characterization and certification of SRAM, Register File, and fuse arrays for Intel's advanced technology nodes. Responsibilities include building Vccmin/Vmax predictive models, correlating silicon results with simulation, analyzing large datasets, and producing risk assessments that inform PDK release decisions. Hybrid role.
Qualifications
- Ph.D. in EE, computer engineering, or physics with 2+ years, or M.S. with 6+ years of semiconductor experience
- 2+ years of hands-on memory testing experience
- 2+ years of quantitative analysis using DOE, SPC, or regression
SemiconductorHardware
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